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RF1601T2D
Diodes
Fast recovery diodes
RF1601T2D
Applications General rectification External dimensions (Unit : mm)
4.50.3 0.1
Structure
Features 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss
1.2
10.00.3 0.1
2.80.2 0.1
5.00.2
8.00.2 12.00.2
Construction Silicon epitaxial planar
1.3 0.8 (1) (2) (3)
13.5MIN
15.00.4 0.2 8.0 0.70.1 0.05
2.60.5
ROHM : O220FN Manufacture Date
Absolute maximum ratings (Ta=25C) Parameter
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc Junction temperature Storage temperature (*1) Per chip Io/2
Electrical characteristic (Ta=25C) Parameter Forward voltage Reverse current Reverse recovery time Symbol VF IR Min. -
Symbol VRM VR Io IFSM Tj Tstg
Limits 200 200 16 80 150 -55 to +150
Unit V V A A
trr
Typ. -
Max. 0.93 10 30
Unit V A ns
Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25*IR
Rev.B
1/3
RF1601T2D
Diodes
Electrical characteristic curves
10 Ta=150
REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(A)
10000 1000
Ta=150 Ta=125
1000
f=1MHz f=1MHz
1
Ta=125 Ta=75
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
Ta=25 Ta=-25
Ta=75 100 Ta=25 10 Ta=-25 1 0.1 0 50 100 150 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 200
100
0.1
10
0.01
0.001
0 100 200 300 400 500 600 700 800 900 100 0
1 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
890
FORWARD VOLTAGE:VF(mV)
Ta=25 IF=8A n=30pcs
100 90
REVERSE CURRENT:IR(nA)
320
Ta=25 VR=200V n=30pcs
315
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
880
80 70 60 50 40 30 20 10
AVE:11.6nA
310 305 300 295 290 285 280 275 270 AVE:293.4pF
Ta=25 f=1MHz VR=0V n=10pcs
870
860
AVE:862.3mV
850
840
VF DISPERSION MAP
0
IR DISPERSION MAP
Ct DISPERSION MAP
300
30
RESERVE RECOVERY TIME:trr(ns)
Ifsm 1cyc 8.3ms
1000
PEAK SURGE FORWARD CURRENT:IFSM(A)
PEAK SURGE FORWARD CURRENT:IFSM(A)
250 200 150 100 50 0
25 20 15 10 5 0
Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs
Ifsm 8.3ms 8.3ms 1cyc
100
10
AVE:210.0A
AVE:18.3ns 1 1
trr DISPERSION MAP
IFSM DISRESION MAP
10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS
100
1000
100
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
Ifsm t
30 Mounted on epoxy board
IM=100mA IF=8A
PEAK SURGE FORWARD CURRENT:IFSM(A)
25
D=1/2 DC
10
1ms
time
300us
FORWARD POWER DISSIPATION:Pf(W)
Rth(j-a)
20
Sin(180)
100
15 10 5
1
Rth(j-c)
10 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
0.1 0.001
0 10 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 5 10 15 20 25 30 35 40
AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS
Rev.B
2/3
RF1601T2D
Diodes
40 40
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
35 30 25 20 15 10 5 0 0 25 50
DC D=1/2
t
VR D=t/T VR=100V T Tj=150
30 25 20 15 10 5 0 0
DC D=1/2
ELECTROSTATIC DISCHARGE TEST ESD(KV)
0A 0V
Io
35
0A 0V
Io t VR D=t/T VR=100V T Tj=150
30 No break at 30kV No break at 30kV 25 20 15 10 5 0 C=200pF R=0 C=100pF R=1.5k
Sin(180)
Sin(180)
75
100
125
150
25
50
75
100
125
150
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
CASE TEMPARATURE:Tc() Derating Curve(Io-Tc)
ESD DISPERSION MAP
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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